GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template
Fu, XX; Zhang, B; Kang, XN; Deng, JJ; Xiong, C; Dai, T; Jiang, XZ; Yu, TJ; Chen, ZZ; Zhang, GY
2011
Source PublicationOPTICS EXPRESS
ISSN1094-4087
Volume19Issue:19Pages:5,A1104-A1108
AbstractIn this paper, we propose and demonstrate a convenient and flexible approach for preparation large-area of photonic crystals (PhCs) structures on the GaN-based LED chip. The highly-ordered porous anodic alumina (AAO) with pitch of wavelength scale was adopted as a selective dry etching mask for PhCs-pattern transfer. The PhCs with different pore depths were simultaneously formed on the entire surfaces of GaN-based LED chip including ITO, GaN surrounding contacts and the sidewall of the mesa by one-step reactive ion etching (RIE). The light output power improvement of PhCs-based GaN LED was achieved as high as 94% compared to that of the conventional GaN-based LED. (C) 2011 Optical Society of America
Subject AreaOptics
Indexed BySCI
Language英语
WOS IDWOS:000294781200009
Citation statistics
Document Type期刊论文
Identifierhttp://ir.casisd.cn/handle/190111/4269
Collection中国科学院科技政策与管理科学研究所(1985年6月-2015年12月)
Recommended Citation
GB/T 7714
Fu, XX,Zhang, B,Kang, XN,et al. GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template[J]. OPTICS EXPRESS,2011,19(19):5,A1104-A1108.
APA Fu, XX.,Zhang, B.,Kang, XN.,Deng, JJ.,Xiong, C.,...&Zhang, GY.(2011).GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template.OPTICS EXPRESS,19(19),5,A1104-A1108.
MLA Fu, XX,et al."GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template".OPTICS EXPRESS 19.19(2011):5,A1104-A1108.
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